Analytic study of strain engineering of the electronic bandgap in single-layer black phosphorus
نویسندگان
چکیده
Jin-Wu Jiang1,* and Harold S. Park2,† 1Shanghai Institute of Applied Mathematics and Mechanics, Shanghai Key Laboratory of Mechanics in Energy Engineering, Shanghai University, Shanghai 200072, People’s Republic of China 2Department of Mechanical Engineering, Boston University, Boston, Massachusetts 02215, USA (Received 28 March 2015; revised manuscript received 18 May 2015; published 11 June 2015)
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